spsemi rev 2016 08 16 ... www.spsemi.cn page 1 of 4 electro-static discharge TUSD05M2U uni-direction tvs diode features uni-directional esd protection of two lines low capacitance: 0.8pf(max) low reverse stand?off voltage: 5v low reverse clamping voltage low leakage current excellent package:2.10mm1.25mm0.96mm fast response time iec 61000-4-2 level 4 esd protection esd/TUSD05M2U iec compatibility iec61000-4-2 (esd) 25kv (air), 25kv (contact) iec61000-4-5 (lightning) 3.5a (8/20 s) mechanical characteristics jedec sot-553 package molding compound flammability rating:ul 94v-o quantity per reel:3000pcs reel size:7 inch lead finish:lead free applications usb3.0 power & data line protection wlan/lan equipment mobile phone video line protection microcontroller input protection isdn s/t interface other electronics equipments communication systems sot-563 pin configuration 1 2 3 6 5 4
spsemi rev 2016 08 16 ... www.spsemi.cn page 2 of 4 parameter symbol value units peak pulse power(tp=8/20s) lead soldering temperature junction temperature storage temperature range p pp t l t j t stg 90 260(10 sec.) 150 -55~150 watts maximum ratings (t =25 unless otherwise specified ) a electrical characteristics (t =25 unless otherwise specified ) a parameter symbol conditions units min. max. TUSD05M2U(marking:u5n2) reverse stand-off voltage reverse leakage current forward voltage v rwm 5 10 12 1 1.5 13 25 0.8 0.4 i=1ma t i=1ma t (vcc to gnd) v rwm =5v i =10ma f i =1a,tp=8/20s pp i =3.5a,tp=8/20s pp v =0v,f=1mhz r v =0v,f=1mhz r (i/o to i/o) 6 5 0.4 v v v a v v v f p f p tipical characteristics fig.2 forward characteristics fig.1 forward characteristics 0.2 forward voltage-v ( ) f v 0.4 forward current-i (ma) f 0.6 0.8 100 1.0 0.1 1 10 1.2 t=25 a t =100 a esd/TUSD05M2U breakdown voltage clamping voltage junction capacitance v br r i f v j c c v (i/o to gnd&vcc to gnd) pulsed i/o pin to ground 0.2 forward voltage-v ( ) f v 0.4 forward current-i (ma) f 0.6 0.8 100 1.0 0.1 1 10 1.2 t=25 a t =100 a pulsed v to ground cc
spsemi tipical characteristics fig.4 reverse characteristics fig.3 reverse characteristics 0 0 reverse voltage-v ( ) r v 4 20 reverse current-i (ma) r 8 10 40 100 60 6 2 12 esd/TUSD05M2U fig.6 capacitance characteristics 2 0 3 4 fig.5 v -i cpp 0 reverse peak pulse current-i (a) pp 1.0 6 clamping voltage-v (v) c 2.0 2.5 reverse voltage-v ( ) r v junction capacitance-c (pf) j 1 12 30 18 t=25 a t =8/20s p 0.2 0.6 0.8 t=25 a f=1mhz 1.5 1.0 5 3.0 0.0 0.4 80 pulsed i/o pin to ground 0 0 reverse voltage-v ( ) r v 4 20 reverse current-i (ma) r 8 10 40 100 60 6 2 12 80 pulsed v to ground cc t=25 a t=25 a t =100 a t =100 a 3.5 24 i/o pin to ground v to ground cc i/o pin to ground i/o pin to i/o pin rev 2016 08 16 ... www.spsemi.cn page 3 of 4
spsemi rev 2016 08 16 ... www.spsemi.cn page 4 of 4 dimensions(sot-563) sot-563 recommended mounting pad layout dimensions in ( ) millimeters inches 1.40 0.055 1.00 0.039 0.30 0.012 0.30 0.012 0.50 0.020 millimeters inches dim a b c d e f g h min 1.50 1.10 0.52 1.50 0.17 0.45 0.20 0.00 max 1.70 1.30 0.60 1.70 0.27 0.55 0.40 0.050 min 0.059 0.043 0.020 0.059 0.007 0.018 0.008 0.000 max 0.067 0.051 0.024 0.067 0.011 0.022 0.016 0.002 e f h a b d c g esd/TUSD05M2U
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